JANTX2N6769

The JANTX2N6769 is designed as one kind of power MOSFET transistor. This device features all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. And it can be used in switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.

Features of the JANTX2N6769 are:(1)avalanche energy rating; (2)dynamic dv/dt rating; (3)simple drive requirements; (4)ease of paralleling; (5)hermetically sealed.

The absolute maximum ratings of the JANTX2N6769 can be summarized as:(1)Continuous Drain Current (ID @ VGS = 10V, TC = 25°C): 30 A;(2)Continuous Drain Current (ID @ VGS = 10V, TC = 100°C): 19 A;(3)Pulsed Drain Current: 120 A;(4)Max. Power Dissipation: 150 W;(5)Linear Derating Factor: 1.2 W/K;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 500 mJ;(8)Avalanche Current: 30 A;(9)Repetitive Avalanche Energy: 15 mJ;(10)Peak Diode Recovery dv/dt:5.0 V/ns. If you want to know more information such as the electrical characteristics about the JANTX2N6769, please download the datasheet in www.seekic.com or www.chinaicmart.com.