JANTX2N2222A

DescriptionThe JANTX2N2222A is a kind of NPN small signal bipolar silicon transistor. It is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high speed,medium current bipolar transistor. The following is some information concerning JANTX2N2222A maxi...

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SeekIC No. : 004381995 Detail

JANTX2N2222A: DescriptionThe JANTX2N2222A is a kind of NPN small signal bipolar silicon transistor. It is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high spee...

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Part Number:
JANTX2N2222A
Supply Ability:
5000

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  • Qty
  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Description

The JANTX2N2222A is a kind of NPN small signal bipolar silicon transistor. It is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high speed,medium current bipolar transistor.

The following is some information concerning JANTX2N2222A maximum ratings. (1): collector to emitter voltage (VCEO) is 50 Vdc; (2): collector to base voltage (VCBO) is 75 Vdc; (3): emitter to base voltage (VEBO) is 6 Vdc; (4): collector current (IC) is 800 mAdc; (5): total device dissipation (PD) is 500 mW at TA is 25 and is 1.8 Watts at TC is 25 ; (6): operating and storage junction temperature range from -65 to 200 . Then is about its off characters. (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 50 Vdc when IC is 10 mAdc and IB is 0; (2): the maximum collector-base cutoff curent (ICBO) is 10 nAdc when VCB is 60 Vdc and is 10 Adc when VCB is 60 Vdc,IE is 0 and TA is 25 ; (3): the maximum emitter-base cutoff current (IEBO) is 10 Adc at VEB is 4 Vdc; (4): the maximum collector-emitter cutoff current (ICES) is 50 nAdc at VCE is 50 Vdc and VBE is 0 V.

There is no much information,if you want more details about JANTX2N2222A electrical charaters,please download the datasheet at www.seekic.com.






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