Features: Architecture- High-density symmetrical 128-Kbyte blocks- 256 Mbit (256 blocks)- 128 Mbit (128 blocks)- 64 Mbit (64 blocks)- 32 Mbit (32 blocks) Performance- 75 ns Initial Access Speed (128/64/32-Mbit densities)- 95 ns Initial Access Speed (256 Mbit only)- 25 ns 8-wor...
J3 v. D): Features: Architecture- High-density symmetrical 128-Kbyte blocks- 256 Mbit (256 blocks)- 128 Mbit (128 blocks)- 64 Mbit (64 blocks)- 32 Mbit (32 blocks) Performance- 75 ns Init...
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Architecture
- High-density symmetrical 128-Kbyte blocks
- 256 Mbit (256 blocks)
- 128 Mbit (128 blocks)
- 64 Mbit (64 blocks)
- 32 Mbit (32 blocks)
Performance
- 75 ns Initial Access Speed (128/64/32
-Mbit densities)
- 95 ns Initial Access Speed (256 Mbit only)
- 25 ns 8-word and 4-word Asynchronous page-mode reads
- 32-Byte Write buffer
- 4 s per Byte Effective programming time
System Voltage and Power
- VCC = 2.7 V to 3.6 V
- VCCQ = 2.7 V to 3.6 V
Packaging
- 56-Lead TSOP package (32, 64, 128 Mbit only)
- 64-Ball Numonyx Easy BGA package (32, 42, 128 and 256 Mbit)
Security
- Enhanced security options for code protection
- 128-bit Protection Register
- 64-bit Unique device identifier
- 64-bit User-programmable OTP cells
- Absolute protection with VPEN = GND
- Individual block locking
- Block erase/program lockout during power transitions
Software
- Program and erase suspend support
- Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
- Operating temperature:-40 °C to +85 °C
- 100K Minimum erase cycles per block
- 0.13 m ETOX™ VIII Process
Parameter | Min | Max | Unit | Notes |
Temperature under Bias Expanded (TA, Ambient) | 40 | +85 | - | |
Storage Temperature | 65 | +125 | - | |
VCC Voltage | 2.0 | +5.6 | V | 2 |
VCCQ | 2.0 | +5.6 | V | 2 |
Voltage on any input/output signal (except VCC, VCCQ) |
2.0 | VCCQ (max) + 2.0 | V | 1 |
ISH Output Short Circuit Current | - | 100 | mA | 3 |
Notes:
1. Voltage is referenced to VSS. During infrequent non-periodic transitions, the voltage potential between VSS and input/ output pins may undershoot to 2.0 V for periods < 20 ns or overshoot to VCCQ (max) + 2.0 V for periods < 20 ns.
2. During infrequent non-periodic transitions, the voltage potential between VCC and the supplies may undershoot to 2.0 V for periods < 20 ns or VSUPPLY (max) + 2.0 V for periods < 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time
This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v. D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel* 0.13 m ETOX™ VIII process technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the Numonyx™ Embedded Flash Memory (J3 v. D) device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The Numonyx™ Embedded Flash Memory (J3 v. D) device takes advantage of the proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.