J309_Q

Forward Transconductance gFS (Max / Min) :
Resistance Drain-Source RDS (on) :
Maximum Drain Gate Voltage :
Drain Current (Idss at Vgs=0) :
Gate-Source Cutoff Voltage :
Configuration : Single
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : - 25 V
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Drain Source Voltage VDS : 25 V
Continuous Drain Current : 30 mA
Packaging : Bulk
Power Dissipation : 625 mW