J308

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : - 25 V
Package / Case : SOT-23


Features:

·
Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
·
Very Low Noise: 2.7 dB @ 450 MHz
·
Very Low Distortion
·
High ac/dc Switch Off-Isolation




Description

The J308 offers superb amplication characteristics. Of special interest is its high-frequency performance. Even at 450MHz, this series offers high power gain at low noise. The features of it are as follows: (1)excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz; (2)very low Noise: 2.7 dB @ 450 MHz; (3)very Low Distortion; (4)high ac/dc Switch Off-Isolation.

What comes next is about the maximum ratings of J308: (1)gate-drain, gate-source voltage: 25 V; (2)gate current : (J/SST Prefixes) : 10 mA and (U Prefix): 20 mA; (3)lead temperature (1/16" from case for 10 sec.) : 300 ; (4)storage temperature : (J/SST prefixes) : 55 to 150 and (U prefix): 65 to 175 ; (5)operating junction temperature : 55 to 150 ; (6)power dissipation : (J/SST Prefixes)a : 350 mW and (U Prefix)b: 500 mW. Notes: a. derate 2.8 mW/ above 25; b. derate 4 mW/ above 25.

The following is about the electrical characteristics of J308: (1)Gate-Source Breakdown Voltage: -25V min and -35V typical at IG = 1 A , VDS = 0 V; (2)Gate-Source Cutoff Voltage: -1V min and -6.5V max at Gate-Source Cutoff Voltage; (3)Saturation Drain Currentc: 12mA min and 60mA max at VDS = 10 V, VGS = 0 V; (4)Gate Reverse Current: -1nA max and -0.002nA typical at VGS = 15 V, VDS = 0 V; (5)Gate Operating Current: -15pA typical at VDG = 9 V, ID = 10 mA; (6)Drain-Source On-Resistance: 35 typical at VGS = 0 V, ID = 1 mA; (7)Gate-Source Forward Voltage: IG = 10 mA, VDS = 0 V. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.