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J212

JFET 25V 15mA

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SeekIC No. : 00144811 Detail

J212: JFET 25V 15mA

J212 Data Sheet

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Part Number:
J212
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Gate-Source Breakdown Voltage : - 25 V
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-92    

Description

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Gate-Source Breakdown Voltage : - 25 V
Mounting Style : Through Hole
Package / Case : TO-92


Features:

HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212)
HIGH INPUT IMPEDANCE I GSS= 100pA MAXIMUM
LOW INPUT CAPACITANCE Ciss = 5pF TYPICAL
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Gate-Drain or Gate-Source Voltage -25V
Gate Current 10mA
Total Device Dissipation @ 25°C Ambient (Derate 3.27 mW/°C) 360mW
Operating Temperature Range -55°C to + 135°C





Parameters:

Technical/Catalog InformationJ212
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeThrough Hole
Package NameTO-92
FET TypeN-Channel
Typical RF ApplicationVHF
Drain to Source Voltage (Vdss)1.5 V [Nom]
Voltage Gate to Source (Vgs)25.0 V [Max]
Drain Gate Voltage (Vdg)25.0 [Nom]
Continuous Drain Current (Id)40.00 mA [Nom]
Forward Gate Current (Igf)10.0 [Nom]
Power Dissipation350.000 mW [Max]
PackagingBulk
Has Digi-ReelNot TR
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names J212
J212
J212FS ND
J212FSND
J212FS



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