Features: Low Noise Low LeakageHigh Power GainApplicationGeneral Purpose Amplifiers VHF/UHF AmplifiersMixers OscillatorsSpecifications Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage VGD -25 V Gate-Source Voltage VGS -25 V Gate Current IG ...
J210-11: Features: Low Noise Low LeakageHigh Power GainApplicationGeneral Purpose Amplifiers VHF/UHF AmplifiersMixers OscillatorsSpecifications Parameter/Test Condition Symbol Limit Unit Gat...
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Low Noise
Low Leakage
High Power Gain
General Purpose Amplifiers
VHF/UHF Amplifiers
Mixers
Oscillators
Parameter/Test Condition |
Symbol |
Limit |
Unit |
Gate-Drain Voltage |
VGD |
-25 |
V |
Gate-Source Voltage |
VGS |
-25 |
V |
Gate Current |
IG |
10 |
mA |
Power Dissipation |
PD |
360 |
mW |
Power Derating |
3.27 |
mW/ oC | |
Operating Junction Temperature |
TJ |
-55 to 135 |
oC |
Storage Temperature |
Tstg |
-55 to 150 |
oC |
Lead Temperature (1/16" from case for 10 seconds) |
TL |
300 |
oC |
The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and amplifier applications.