JFET 25V 0.2mA
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Transistor Polarity : | N-Channel | Gate-Source Breakdown Voltage : | - 25 V |
Configuration : | Single | Mounting Style : | Through Hole |
Package / Case : | TO-226AA |
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . .. -55 to +150
Operating Temperature Range . . . . . . . . . . . -55 to +135
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.