J176,126

Forward Transconductance gFS (Max / Min) :
Continuous Drain Current :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Drain Source Voltage VDS : 30 V
Power Dissipation : 300 mW
Maximum Drain Gate Voltage : 30 V
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 30 V
Packaging : Ammo
Resistance Drain-Source RDS (on) : 250 Ohms
Gate-Source Cutoff Voltage : 1 V to 4 V
Drain Current (Idss at Vgs=0) : 2 mA to 35 mA
Package / Case : SC-43 (TO-92)


Parameters:

Technical/Catalog Information	J176,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Drain (Idss) @ Vds (Vgs=0)	2mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	8pF @ 10V (VGS)
Power - Max	300mW
Packaging	Tape & Box (TB)
Package / Case	SOT-23
Voltage - Cutoff (VGS off) @ Id	1V @ 10nA
Voltage - Breakdown (V(BR)GSS)	30V
Resistance - RDS(On)	250 Ohm
Current Drain (Id) - Max	-
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	J176,126 J176,126