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IXZR18N50

Features: • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability• IXYS advanced Z-MOS process• Low gate charge and capacitances − easier to drive − faster switching&...

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SeekIC No. : 004381703 Detail

IXZR18N50: Features: • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability• IXYS advanced Z-M...

IXZR18N50 Data Sheet

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Part Number:
IXZR18N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Isolated Substrate
   − high isolation voltage (>2500V)
   − excellent thermal transfer
   − Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
   − easier to drive
   − faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials




Application

• Optimized for RF and high speed
• Easy to mount-no insulators needed
• High power density


Specifications

VDSS TJ = 25°C to 150°C ....................500 V
VDGR TJ = 25°C to 150°C; RGS = 1 M................500 V
VGS Continuous  .........................±20 V
VGSM Transient..........................±30 V
ID 25 Tc = 25°C ..........................19 A
IDM Tc = 25°C, pulse width limited by TJM.............95 A
IAR Tc = 25°C ........................... 19 A
EAR Tc = 25°C ..........................TBD mJ
dv/dt
IS IDM, di/dt 100A/s, VDD VDSS,
Tj 150°C, RG = 0.2
...................................5 V/ns
IS = 0 >200  .............................V/ns
PDC  ................................TBD W
PDHS Tc = 25°C, Derate 4.4W/°C above 25°C ......... TBD W
PDAMB Tc = 25°C  .........................3.0 W
RthJC .................................C/W
RthJHS  ................................C/W


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