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IXZ308N120

Features: • Isolated Substrate− high isolation voltage (>2500V)− excellent thermal transfer− Increased temperature and power cycling capability• IXYS advanced Z-MOS process• Low gate charge and capacitances− easier to drive− faster switching•...

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SeekIC No. : 004381702 Detail

IXZ308N120: Features: • Isolated Substrate− high isolation voltage (>2500V)− excellent thermal transfer− Increased temperature and power cycling capability• IXYS advanced Z-MOS ...

IXZ308N120 Data Sheet

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Part Number:
IXZ308N120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
1200
1200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
Tc = 25
Tc = 25, pulse width limited by TJM
8
40
A
A
IAR
Tc = 25
8
A
EAR
Tc = 25
TBD
mJ
dv/dt
IS IDM, di/dt 100A/s, VDD VDSS,
Tj 150, RG = 0.2
IS = 0
5
>200


V/ns
V/ns
PDC
PDHS
PDAMB
Tc = 25, Derate 4.4W/ above 25
Tc = 25
880
440
3.0
W
W
W
RthJC
RthJHS
0.17
0.34
C/W
C/W



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