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IXUN350N10

MOSFET 350 Amps 10V

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SeekIC No. : 00164473 Detail

IXUN350N10: MOSFET 350 Amps 10V

IXUN350N10 Data Sheet

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Part Number:
IXUN350N10
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 350 A
Resistance Drain-Source RDS (on) : 0.0019 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0019 Ohms
Package / Case : SOT-227B
Continuous Drain Current : 350 A


Parameters:

Technical/Catalog InformationIXUN350N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C350A
Rds On (Max) @ Id, Vgs2.5 mOhm @ 175A, 10V
Input Capacitance (Ciss) @ Vds 27000pF @ 25V
Power - Max830W
PackagingTube
Gate Charge (Qg) @ Vgs640nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXUN350N10
IXUN350N10



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