MOSFET 90 Amps 250V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 90 A | ||
Resistance Drain-Source RDS (on) : | 33 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Package / Case : | PLUS 247 |
Technical/Catalog Information | IXTX90N25L2 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 23000pF @ 25V |
Power - Max | 960W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 640nC @ 10V |
Package / Case | PLUS 247 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTX90N25L2 IXTX90N25L2 |