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IXTT88N15

MOSFET 88 Amps 150 V 0.022 W Rds

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SeekIC No. : 00154192 Detail

IXTT88N15: MOSFET 88 Amps 150 V 0.022 W Rds

IXTT88N15 Data Sheet

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Part Number:
IXTT88N15
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 88 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Packaging : Bulk
Continuous Drain Current : 88 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

·International standard packages
·Low RDS (on) HDMOSTM  process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS)rated
·Low package inductance
-easy to drive and to protect


Specifications

Symbol Test Conditions
VDSS TJ= 25 to 150
150
V
VDGR TJ = 25 to 150;RGS =1 M
150
V
VGS Continuous
±20
V
VGSM Transient
±30
V
ID25 TC = 25
88
A
IDM TC = 25, pulse width limited by TJM
352
A
IAR TC = 25
88
A
EAR TC = 25
50
mJ
EAS TC = 25
1.5
J
dv/dt ISIDM, di/dt 100 A/s, VDDVDSS
5
V/ns
PD TJ150, RG = 2
  TC = 25
400
W
TJ  
-55.+150
TJM  
150
Tstg  
-55.+150
TL 1.6 mm (0.062 in.) from case for 10 s
300
Md Mounting torque
1.13/10
Nm/lb.in.
Weight TO-247 AD
6
g
  TO-268
4
g



Parameters:

Technical/Catalog InformationIXTT88N15
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C88A
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max400W
PackagingBulk
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT88N15
IXTT88N15



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