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IXTT60N10

MOSFET 60 Amps 100 V 0.033 W Rds

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SeekIC No. : 00159253 Detail

IXTT60N10: MOSFET 60 Amps 100 V 0.033 W Rds

IXTT60N10 Data Sheet

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Part Number:
IXTT60N10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.02 Ohms


Parameters:

Technical/Catalog InformationIXTT60N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT60N10
IXTT60N10



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