MOSFET -48.0 Amps -200V 0.085 Rds
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 48 A | ||
Resistance Drain-Source RDS (on) : | 0.085 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-268 | Packaging : | Tube |
Technical/Catalog Information | IXTT48P20P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 5400pF @ 25V |
Power - Max | 462W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 103nC @ 10V |
Package / Case | TO-268 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTT48P20P IXTT48P20P |