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IXTT1N100

MOSFET 1 Amps 1000V

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SeekIC No. : 00154281 Detail

IXTT1N100: MOSFET 1 Amps 1000V

IXTT1N100 Data Sheet

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Part Number:
IXTT1N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 11 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 1.5 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 11 Ohms


Features:

· International standard packages
· High voltage, Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers
· High frequency matching


Specifications

VDS
VDGR 		TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 1.5
6		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25		 1.5
6
200		 A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 18 		3 V/ns
PD TC = 25°C 60 W
TJ
TJM
Tstg		   -55 ... +150
50
-55 ... +150

Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268
TO-247		 4
6		 g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		   300



Parameters:

Technical/Catalog InformationIXTT1N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs11 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT1N100
IXTT1N100



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