MOSFET 140 Amps 100V 0.011 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 140 A | ||
Resistance Drain-Source RDS (on) : | 0.011 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-268 | Packaging : | Tube |
Symbol |
Test Conditions |
Maximum |
Ratings |
VDSS VDGR |
TC = 25to 175 TJ = 25 to 175; RGS = 1 M |
100 100 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 ID(RMS) IDM |
TC = 25, External lead current limit TC = 25, pulse width limited by TJM |
140 75 300 |
A A A |
IAR EAR EAS |
TC = 25 TC = 25 TC = 25 |
60 80 2.5 |
A mJ J |
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 4 |
10 |
V/ns |
PD |
TC = 25 |
600 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
TL VISOL |
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s |
300 260 |
|
Md |
Mounting torque (TO-3P) |
1.13/10 |
Nm/lb.in. |
Weight |
TO-3P TO-268 |
5.5 5.0 |
g g |
Technical/Catalog Information | IXTT140N10P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 140A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4700pF @ 25V |
Power - Max | 600W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 155nC @ 10V |
Package / Case | TO-268 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTT140N10P IXTT140N10P |