Position: Home  > All Categories> Integrated Circuits (ICs) > IXTT140N10P

IXTT140N10P

MOSFET 140 Amps 100V 0.011 Rds

product image

IXTT140N10P Picture
See larger image
SeekIC No. : 00154098 Detail

IXTT140N10P: MOSFET 140 Amps 100V 0.011 Rds

IXTT140N10P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTT140N10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Package / Case : TO-268
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

· International standard packages
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
    - easy to drive and to protect


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
 TC = 25to 175
TJ = 25 to 175; RGS = 1 M
100
100
V
V
VGS
VGSM
 Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
 TC = 25,
External lead current limit
TC = 25, pulse width limited by TJM
140
75
300
A
A
A
IAR
EAR
EAS
 TC = 25
TC = 25
TC = 25
60
80
2.5
A
mJ
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 4
10
V/ns
PD
 TC = 25
600
W
TJ
TJM
Tstg
 
-55 ... +150
150
-55 ... +150


TL
VISOL
 1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260

Md
 Mounting torque (TO-3P)
1.13/10
Nm/lb.in.
Weight
 TO-3P
TO-268
5.5
5.0
g
g



Parameters:

Technical/Catalog InformationIXTT140N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C140A
Rds On (Max) @ Id, Vgs11 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT140N10P
IXTT140N10P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Optoelectronics
SFH7770
TLP423J
Transformers
TM-09210
BV222-1-00992
Cables, Wires
821-0814-a
415-0100-150
Kits
IT243
UVSC-110-4E1
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more