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IXTT11P50

MOSFET 11 Amps 500V 0.75 Rds

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SeekIC No. : 00154441 Detail

IXTT11P50: MOSFET 11 Amps 500V 0.75 Rds

IXTT11P50 Data Sheet

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Part Number:
IXTT11P50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 11 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.75 Ohms
Package / Case : TO-268
Continuous Drain Current : - 11 A
Drain-Source Breakdown Voltage : - 500 V


Features:

  International standard packages
  Low RDS (on) HDMOSTM process
  Rugged polysilicon gate cell structure
  Unclamped Inductive Switching (UIS) rated
  Low package inductance
   - easy to drive and to protect


Application

  Easy to mount
  Space savings
  High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C RGS = 1 MΩ		 -500
-500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C		 -11
-44
-11

A
A
A

EAR TC = 25°C 30 mJ
PD TC = 25°C 300 W
TJ
TJM
Tstg
   -55 ... +150
150
-55 ... +150
°C
°C
°C
TL Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C
Md Mounting torque (TO-247) 1.13/10 Nm/lb.in
Weight TO-247 AD
TO-268		 6
4		 g
g



Parameters:

Technical/Catalog InformationIXTT11P50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs750 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT11P50
IXTT11P50



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