IXTT110N10P

MOSFET N-CH 100V 110A TO-268

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SeekIC No. : 003432505 Detail

IXTT110N10P: MOSFET N-CH 100V 110A TO-268

floor Price/Ceiling Price

US $ 3.17~3.17 / Piece | Get Latest Price
Part Number:
IXTT110N10P
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~90
  • Unit Price
  • $3.17
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: PolarHT™ Manufacturer: IXYS
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 110A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) @ Vgs: 110nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3550pF @ 25V
Power - Max: 480W Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 110A
Manufacturer: IXYS
Series: PolarHT™
Power - Max: 480W
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 3550pF @ 25V


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect



Application

·Easy to mount
·Space savings
·High power density



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
100
100
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
External lead current limit
TC = 25, pulse width limited by TJM
110
75
250
A
A
A
IAR
EAR
EAS
TC = 25
TC = 25
TC = 25
60
40
1.0
A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω
10 V/ns
PD TC = 25 480 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-268
5.5
5.0
g
g



Parameters:

Technical/Catalog InformationIXTT110N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs15 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3550pF @ 25V
Power - Max480W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT110N10P
IXTT110N10P



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