MOSFET -10 Amps -500V 0.9 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.9 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-268 | Packaging : | Bulk |
Technical/Catalog Information | IXTT10P50 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4700pF @ 25V |
Power - Max | 300W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 160nC @ 10V |
Package / Case | TO-268 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTT10P50 IXTT10P50 |