IXTT10P50

MOSFET -10 Amps -500V 0.9 Rds

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SeekIC No. : 00153841 Detail

IXTT10P50: MOSFET -10 Amps -500V 0.9 Rds

floor Price/Ceiling Price

Part Number:
IXTT10P50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Bulk    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Continuous Drain Current : 10 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.9 Ohms
Drain-Source Breakdown Voltage : - 500 V


Parameters:

Technical/Catalog InformationIXTT10P50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max300W
PackagingBulk
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT10P50
IXTT10P50



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