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IXTT10N100D

MOSFET 10 Amps 1000V 1.4 Rds

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SeekIC No. : 00154193 Detail

IXTT10N100D: MOSFET 10 Amps 1000V 1.4 Rds

IXTT10N100D Data Sheet

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Part Number:
IXTT10N100D
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1.4 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268


Parameters:

Technical/Catalog InformationIXTT10N100D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-268
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT10N100D
IXTT10N100D



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