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IXTN58N50

Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Low drain-to-case capacitance (<100 pF) - reduced RFI• Low package inductance (< 10 nH) - easy to drive and to ...

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SeekIC No. : 004381691 Detail

IXTN58N50: Features: • International standard package• Isolation voltage 3000V (RMS)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Low drain-to-case capac...

IXTN58N50 Data Sheet

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Part Number:
IXTN58N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• International standard package
• Isolation voltage 3000V (RMS)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance (<100 pF)
   - reduced RFI
• Low package inductance (< 10 nH)
   - easy to drive and to protect
• Aluminium Nitride Isolation
   - increased current ratings


Application

• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 500
500		 V
VGES
VGEM		 Transient ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 58
61
232
244		 AA
A
A
A
PD TC = 25 360 W
TJ
TJM
Tstg		   -40 ... +150
150
-40 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 minute
t = 1s		 2500
3000		 V~
V~
Md Mounting torque
Terminal connection torque (M4)		 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in.
Weight   30 g



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