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IXTN30N100L: MOSFET 30 Amps 1000V

IXTN30N100L Data Sheet

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Part Number:: IXTN30N100L
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	0.45 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.45 Ohms

Parameters:

Technical/Catalog Information	IXTN30N100L
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	450 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds	13700pF @ 25V
Power - Max	800W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	545nC @ 20V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Other Names	IXTN30N100L IXTN30N100L

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IXTN30N100L

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