IXTN21N100

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B


Features:

·International standard packages JEDEC TO-264, epoxy meet UL 94 V-0
·flammability classification
·miniBLOC, (ISOTOP-compatible) with
·Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Low package inductance


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum		Ratings
		IXTK	IXTN
VCES VCGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M	1000 1000	1000 1000	V V
VGES VGEM	Continuous Transient	±20 ±30	±20 ±30	V V
ID25 IDM	21 84	21 84	21 84	A A
PD	TC = 25°C	500	500	w
TJ TJM Tstg		-55 ... +150 150 -55 ... +150		°C °C °C
TL	1.6 mm (0.063 in) from case for 10 s	300	-	°C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	- -	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	0.9/6 -	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in..
Weight		10	30	g

Parameters:

Technical/Catalog Information	IXTN21N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	550 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8400pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTN21N100 IXTN21N100