MOSFET 180 Amps 100V 6.1 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Continuous Drain Current : | 200 A | Resistance Drain-Source RDS (on) : | 0.0074 Ohms |
Configuration : | Dual Common Gate | Maximum Operating Temperature : | + 175 C |
Mounting Style : | SMD/SMT | Package / Case : | ISOPLUS i5-Pak |
Packaging : | Tube |
Technical/Catalog Information | IXTL2X180N10T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 6900pF @ 25V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 151nC @ 10V |
Package / Case | ISOPLUSi5-Pak? |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTL2X180N10T IXTL2X180N10T |