MOSFET 62 Amps 250V 0.035 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 62 A | ||
Resistance Drain-Source RDS (on) : | 0.035 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ |
250 250 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
62 248 62 |
A A A |
EAR EAS |
TC = 25°C TC = 25°C |
45 1.5 |
mJ J |
dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 Ω |
5 | V/ns |
PD | TC = 25°C | 390 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | |
Md | Mounting torque | 0.7/6 | Nm/lb.in. |
Weight | TO-264 | 10 | g |
Technical/Catalog Information | IXTK62N25 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 62A |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 5400pF @ 25V |
Power - Max | 390W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 240nC @ 10V |
Package / Case | TO-264 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTK62N25 IXTK62N25 |