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IXTK250N10

MOSFET 250 Amps 100V 0.005 Rds

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SeekIC No. : 00158466 Detail

IXTK250N10: MOSFET 250 Amps 100V 0.005 Rds

IXTK250N10 Data Sheet

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Part Number:
IXTK250N10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 250 A
Resistance Drain-Source RDS (on) : 0.005 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.005 Ohms
Continuous Drain Current : 250 A
Package / Case : TO-264AA


Parameters:

Technical/Catalog InformationIXTK250N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C250A
Rds On (Max) @ Id, Vgs5 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds 12700pF @ 25V
Power - Max730W
PackagingBulk
Gate Charge (Qg) @ Vgs430nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK250N10
IXTK250N10



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