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IXTK21N100

MOSFET 21 Amps 100V 0.55 Ohm Rds

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SeekIC No. : 00151090 Detail

IXTK21N100: MOSFET 21 Amps 100V 0.55 Ohm Rds

IXTK21N100 Data Sheet

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Part Number:
IXTK21N100
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.55 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-264AA


Features:

·International standard packages JEDEC TO-264, epoxy meet UL 94 V-0
·flammability classification
·miniBLOC, (ISOTOP-compatible) with
·Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
IXTK IXTN
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000		 1000
1000		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 ±20
±30		 V
V
ID25
IDM		 21
84		 21
84		 21
84		 A
A
PD TC = 25°C 500 500 w
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in) from case for 10 s 300 - °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s		 -
-		 2500
3000		 V~
V~
Md Mounting torque
Terminal connection torque		 0.9/6
-		 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in..
Weight   10 30 g



Parameters:

Technical/Catalog InformationIXTK21N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs550 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK21N100
IXTK21N100



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