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IXTK120N25

MOSFET 120 Amps 250V 0.020 Rds

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SeekIC No. : 00159109 Detail

IXTK120N25: MOSFET 120 Amps 250V 0.020 Rds

IXTK120N25 Data Sheet

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Part Number:
IXTK120N25
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Resistance Drain-Source RDS (on) : 0.02 Ohms
Package / Case : TO-264AA


Features:

• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times


Application

• Motor controls
• DC choppers
• Switched-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M?		 600
600		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
IC25
IC90
ICM		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms		 50
30
100		 A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TVJ = 125°C, RG = 33 ?
Clamped inductive load, L = 100 H		 ICM = 60
@ 0.8 VCES		 A
tSC
(SCSOA)		 VGE = 15 V, VCE =360 V, TJ = 125°C
RG = 33 ?, non repetitive		 10 s
PC TC = 25°C 200 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXTK120N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7700pF @ 25V
Power - Max730W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK120N25
IXTK120N25



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