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IXTH96N20P

MOSFET 96 Amps 200V 0.024 Rds

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SeekIC No. : 00153997 Detail

IXTH96N20P: MOSFET 96 Amps 200V 0.024 Rds

IXTH96N20P Data Sheet

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Part Number:
IXTH96N20P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Parameters:

Technical/Catalog InformationIXTH96N20P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C96A
Rds On (Max) @ Id, Vgs24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4800pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs145nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH96N20P
IXTH96N20P



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