Position: Home  > All Categories> Integrated Circuits (ICs) > IXTH88N15

IXTH88N15

MOSFET 88 Amps 150V 0.022 Rds

product image

IXTH88N15 Picture
See larger image
SeekIC No. : 00154001 Detail

IXTH88N15: MOSFET 88 Amps 150V 0.022 Rds

IXTH88N15 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTH88N15
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 88 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Packaging : Bulk
Continuous Drain Current : 88 A
Resistance Drain-Source RDS (on) : 0.022 Ohms
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM  process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS)rated
·Low package inductance
-easy to drive and to protect


Specifications

Symbol Test Conditions
VDSS TJ= 25 to 150
150
V
VDGR TJ = 25 to 150;RGS =1 M
150
V
VGS Continuous
±20
V
VGSM Transient
±30
V
ID25 TC = 25
88
A
IDM TC = 25, pulse width limited by TJM
352
A
IAR TC = 25
88
A
EAR TC = 25
50
mJ
EAS TC = 25
1.5
J
dv/dt ISIDM, di/dt 100 A/s, VDDVDSS
5
V/ns
PD TJ150, RG = 2
  TC = 25
400
W
TJ  
-55.+150
TJM  
150
Tstg  
-55.+150
TL 1.6 mm (0.062 in.) from case for 10 s
300
Md Mounting torque
1.13/10
Nm/lb.in.
Weight TO-247 AD
6
g
  TO-268
4
g



Parameters:

Technical/Catalog InformationIXTH88N15
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C88A
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH88N15
IXTH88N15



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Prototyping Products
AVT4168
DE1
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Memory Cards, Modules
WT32
VTL5C7
Tapes, Adhesives
803
AC452-2
Circuit Protection
A50QS75-4Y
F-17*77
View more