IXTH6N120 Selling Leads, Price trend , Ixys, IXTH6N120 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00154516 Detail

IXTH6N120: MOSFET 6 Amps 1200V 2.700 Rds

IXTH6N120 Data Sheet

Get Latest Price

Part Number:: IXTH6N120
Mfg:: Ixys
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IXTH 10P60 evaluate
Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
IXTH 28N50Q evaluate
Features:
IXTH 30N60P evaluate
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6 A
Resistance Drain-Source RDS (on) :	2.4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Packaging : Bulk
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 2.4 Ohms
Package / Case : TO-247AD

Features:

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

Application

·Easy to mount
·Space savings
·High power density

Parameters:

Technical/Catalog Information	IXTH6N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1950pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH6N120 IXTH6N120

Customers Who Bought This Item Also Bought

IXTH150N17T
US $$5.26 - 7.25 / Piece

Supply Ability:10000Week

View details
IXTH15N45 IXYS
US $$7.00 - 10.00 / Piece

Supply Ability:10000Day

View details
IXTH220N055T
US $$2.00 - 5.00 / Piece

Supply Ability:10000Week

View details
IXTH24N50
US $$0.10 - 10.00 / Piece

Supply Ability:2Day

View details
IXTH67N10
US $$1.00 - 2.00 / Piece

Supply Ability:10000Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IXTH6N120

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Programmers, Development Systems(1039)

Inductors, Coils, Chokes(1216)

Computers, Office - Components, Accessories(4539)

Optoelectronics(3638)

Cables, Wires(3584)

Capacitors(4587)