IXTH6N120 Selling Leads, Price trend , Ixys, IXTH6N120 DataSheet download, circuit diagram from SeekIC.com

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IXTH6N120: MOSFET 6 Amps 1200V 2.700 Rds

IXTH6N120 Data Sheet

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Part Number:: IXTH6N120
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6 A
Resistance Drain-Source RDS (on) :	2.4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Packaging : Bulk
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 2.4 Ohms
Package / Case : TO-247AD

Features:

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

Application

·Easy to mount
·Space savings
·High power density

Parameters:

Technical/Catalog Information	IXTH6N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1950pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH6N120 IXTH6N120

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IXTH6N120

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