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IXTH5N100A

MOSFET 5 Amps 1000V 2 Rds

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SeekIC No. : 00159089 Detail

IXTH5N100A: MOSFET 5 Amps 1000V 2 Rds

IXTH5N100A Data Sheet

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Part Number:
IXTH5N100A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 5 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 2 Ohms
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
   - easy to drive and to protect
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000
 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30
 V
ID25
IDM
 TC = 25°C
TC = 25°C, pulse width limited by TJM
 5
20

A
A

PD TC = 25°C 180 W
TJ
TJM
Tstg		 1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204
TO-247		 18
6		 g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
 300 °C



Parameters:

Technical/Catalog InformationIXTH5N100A
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH5N100A
IXTH5N100A



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