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IXTH5N100

Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Supplie...

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SeekIC No. : 004381676 Detail

IXTH5N100: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesA...

IXTH5N100 Data Sheet

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Part Number:
IXTH5N100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
   - easy to drive and to protect
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000
 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30
 V
ID25
IDM
 TC = 25°C
TC = 25°C, pulse width limited by TJM
 5
20

A
A

PD TC = 25°C 180 W
TJ
TJM
Tstg		 1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204
TO-247		 18
6		 g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
 300 °C



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