IXTH50P085

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.055 Ohms
Continuous Drain Current : - 50 A
Package / Case : TO-247AD
Drain-Source Breakdown Voltage : - 85 V


Features:

• International standard package JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH)
- easy to drive and to protect


Application

• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment


Parameters:

Technical/Catalog Information	IXTH50P085
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	85V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	55 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH50P085 IXTH50P085