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IXTH3N120

MOSFET 3 Amps 1200V 4.500 Rds

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SeekIC No. : 00154155 Detail

IXTH3N120: MOSFET 3 Amps 1200V 4.500 Rds

IXTH3N120 Data Sheet

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Part Number:
IXTH3N120
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Package / Case : TO-247
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms


Features:

·International standard packages
·Low RDS (on)
·Rated for unclamped Inductive load Switching (UIS)
·Molding epoxies meet UL 94 V-0 flammability classification


Application

·Easy to mount
·Space savings
·High power density


Parameters:

Technical/Catalog InformationIXTH3N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH3N120
IXTH3N120



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