MOSFET 24 Amps 500V 0.23 Rds
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 24 A | ||
Resistance Drain-Source RDS (on) : | 0.23 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
500 500 |
V |
VGES VGEM |
Transient | ±20 ±30 |
V V |
ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
21 24 84 96 |
A A A A |
PD | TC = 25 | 300 | W |
TJ TJM Tstg |
-50 ... +150 150 -50 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | TO-204 TO-247 |
18 6 |
g g |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |
Technical/Catalog Information | IXTH24N50 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 24A |
Rds On (Max) @ Id, Vgs | 230 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4200pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 190nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Other Names | IXTH24N50 IXTH24N50 |