IXTH20N60

MOSFET 20 Amps 600V 0.35 Rds

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IXTH20N60 Picture
SeekIC No. : 00159272 Detail

IXTH20N60: MOSFET 20 Amps 600V 0.35 Rds

floor Price/Ceiling Price

Part Number:
IXTH20N60
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
   - easy to drive and to protect Fast switching times



Application

·Switch-mode and resonant-mode power supplies
·Motor control
·Uninterruptible Power Supplies (UPS)
·DC choppers



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
600
600
V
VGES
VGEM
Transient ±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
15
20
60
80
A
A
A
A
PD TC = 25 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-204
TO-247
18
6
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C



Parameters:

Technical/Catalog InformationIXTH20N60
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs350 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH20N60
IXTH20N60



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