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IXTH180N10T

MOSFET 180 Amps 100V 6.1 Rds

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SeekIC No. : 00153862 Detail

IXTH180N10T: MOSFET 180 Amps 100V 6.1 Rds

IXTH180N10T Data Sheet

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Part Number:
IXTH180N10T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 180 A Resistance Drain-Source RDS (on) : 0.0064 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-247
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0064 Ohms
Package / Case : TO-247
Continuous Drain Current : 180 A


Parameters:

Technical/Catalog InformationIXTH180N10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs6.4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6900pF @ 25V
Power - Max480W
PackagingTube
Gate Charge (Qg) @ Vgs151nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH180N10T
IXTH180N10T



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