MOSFET 13 Amps 1100V 0.92 Rds
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1100 1100 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
13 52 |
A A A |
PD | TC = 25°C | 360 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque (TO-220) | 1.13/10 | Nm/lb.in. |
Weight | 6 | g | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |
Technical/Catalog Information | IXTH13N110 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1100V (1.1kV) |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 5650pF @ 25V |
Power - Max | 360W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 195nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTH13N110 IXTH13N110 |