MOSFET 130 Amps 100V 8.5 Rds
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Continuous Drain Current : | 130 A | Resistance Drain-Source RDS (on) : | 0.0085 Ohms |
Configuration : | Single | Maximum Operating Temperature : | + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
Technical/Catalog Information | IXTH130N10T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 130A |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 5080pF @ 25V |
Power - Max | 360W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 104nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTH130N10T IXTH130N10T |