MOSFET 12 Amps 1000V 1.05 Rds
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Drain-Source Breakdown Voltage : | 1 KV | Continuous Drain Current : | 12 A | ||
Resistance Drain-Source RDS (on) : | 1050 mOhms | Configuration : | Single | ||
Package / Case : | TO-247 | Packaging : | Tube |
Technical/Catalog Information | IXTH12N100Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 12A |
Rds On (Max) @ Id, Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-247 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTH12N100Q IXTH12N100Q |