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IXTH12N100L

MOSFET 12 Amps 1000V 1.3 Ohms Rds

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SeekIC No. : 00151148 Detail

IXTH12N100L: MOSFET 12 Amps 1000V 1.3 Ohms Rds

IXTH12N100L Data Sheet

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Part Number:
IXTH12N100L
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Package / Case : TO-247
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.3 Ohms


Parameters:

Technical/Catalog InformationIXTH12N100L
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs1.3 Ohm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 20V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH12N100L
IXTH12N100L



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