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IXTH120P065T

MOSFET -120 Amps -65V 0.01 Rds

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SeekIC No. : 00151247 Detail

IXTH120P065T: MOSFET -120 Amps -65V 0.01 Rds

IXTH120P065T Data Sheet

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Part Number:
IXTH120P065T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 65 V
Gate-Source Breakdown Voltage : 15 V Continuous Drain Current : - 120 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 10 mOhms
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : - 65 V
Continuous Drain Current : - 120 A


Parameters:

Technical/Catalog InformationIXTH120P065T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)65V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 13200pF @ 25V
Power - Max298W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH120P065T
IXTH120P065T



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