IXTH11P50 Selling Leads, Price trend , Ixys, IXTH11P50 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00154115 Detail

IXTH11P50: MOSFET -11 Amps -500V 0.75 Rds

IXTH11P50 Data Sheet

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Part Number:: IXTH11P50
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/2/15

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 500 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	- 11 A
Resistance Drain-Source RDS (on) :	0.75 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.75 Ohms
Continuous Drain Current : - 11 A
Drain-Source Breakdown Voltage : - 500 V
Package / Case : TO-247AD

Parameters:

Technical/Catalog Information	IXTH11P50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	750 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4700pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH11P50 IXTH11P50

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IXTH11P50

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