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IXTH10P50P

MOSFET -10.0 Amps -500V 1.000 Rds

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SeekIC No. : 00154143 Detail

IXTH10P50P: MOSFET -10.0 Amps -500V 1.000 Rds

IXTH10P50P Data Sheet

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Part Number:
IXTH10P50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 1 Ohms
Drain-Source Breakdown Voltage : - 500 V


Parameters:

Technical/Catalog InformationIXTH10P50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2840pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH10P50P
IXTH10P50P



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