IXTH102N20T Selling Leads, Price trend , Ixys, IXTH102N20T DataSheet download, circuit diagram from SeekIC.com

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IXTH102N20T: MOSFET 102 Amps 200V 22 Rds

IXTH102N20T Data Sheet

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Part Number:: IXTH102N20T
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	102 A
Resistance Drain-Source RDS (on) :	0.023 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : TO-247AD
Continuous Drain Current : 102 A

Parameters:

Technical/Catalog Information	IXTH102N20T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	102A
Rds On (Max) @ Id, Vgs	23 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6800pF @ 25V
Power - Max	750W
Packaging	Tube
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH102N20T IXTH102N20T

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IXTH102N20T

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