MOSFET 118 Amps 100V 5.4 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Continuous Drain Current : | 101 A | Resistance Drain-Source RDS (on) : | 0.0063 Ohms |
Configuration : | Single | Maximum Operating Temperature : | + 175 C |
Mounting Style : | SMD/SMT | Package / Case : | ISOPLUS 220 |
Packaging : | Tube |
Technical/Catalog Information | IXTC200N10T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 101A |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 9400pF @ 25V |
Power - Max | 160W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 152nC @ 10V |
Package / Case | ISOPLUS220? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTC200N10T IXTC200N10T |