IXTC200N10T

MOSFET 118 Amps 100V 5.4 Rds

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SeekIC No. : 00154045 Detail

IXTC200N10T: MOSFET 118 Amps 100V 5.4 Rds

floor Price/Ceiling Price

Part Number:
IXTC200N10T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 101 A Resistance Drain-Source RDS (on) : 0.0063 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : ISOPLUS 220
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0063 Ohms
Continuous Drain Current : 101 A
Package / Case : ISOPLUS 220


Parameters:

Technical/Catalog InformationIXTC200N10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C101A
Rds On (Max) @ Id, Vgs6.3 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs152nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTC200N10T
IXTC200N10T



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