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IXTC160N10T

MOSFET 160 Amps 100V 6.9 Rds

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SeekIC No. : 00154310 Detail

IXTC160N10T: MOSFET 160 Amps 100V 6.9 Rds

IXTC160N10T Data Sheet

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Part Number:
IXTC160N10T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 83 A Resistance Drain-Source RDS (on) : 0.0075 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : ISOPLUS 220
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Continuous Drain Current : 83 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms
Package / Case : ISOPLUS 220


Parameters:

Technical/Catalog InformationIXTC160N10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C83A
Rds On (Max) @ Id, Vgs7.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 25V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs132nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTC160N10T
IXTC160N10T



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